TSMC and Taiwan’s Industrial Technology Research Institute have just unveiled their latest innovation: a spin-orbit-torque magnetic random-access memory array chip. This breakthrough is the fruit of a joint development program that the two powerhouses embarked on back in 2022. The new memory device is no ordinary chip; it is designed for computing in memory architectures, featuring non-volatility, low latencies, and incredibly low power consumption – a mere 1% of that of spin-transfer torque MRAM.
In the realm of computing, speed is king, and the SOT-MRAM certainly holds its own. With latencies as low as 10ns, this memory technology may not match the speed of SRAM, but it outpaces DRAM and leaves 3D TLC NAND in the dust. Dr. Shih-Chieh Chang, General Director of Electronic and Optoelectronic System Research Laboratories at ITRI, highlighted the impressive attributes of the SOT-MRAM, stating, “This unit cell achieves simultaneous low power consumption and high-speed operation, reaching speeds as rapid as 10ns.” Furthermore, the integration of computing in memory circuit design could further boost its overall computing performance, opening doors for applications in high-performance computing, artificial intelligence, automotive chips, and beyond.
The crux of SOT-MRAM’s prowess lies in the utilization of magnetic states to store data, a characteristic shared with its counterpart, spin-transfer torque MRAM. However, the key differentiator lies in the process of writing data onto the memory cell. In the case of SOT-MRAM, the magnetization in the free layer is altered by passing a current through the heavy metal layer. This generates a spin current, which is then injected into the adjacent magnetic layer, effectively switching its orientation and altering its state. This unique methodology results in lower power consumption and enhanced device longevity, setting it apart from the conventional STT-MRAM.
While SOT-MRAM certainly offers lower standby power consumption when compared to SRAM, it necessitates high currents for write operations, contributing to relatively high dynamic power consumption. Nevertheless, the potential applications of this innovative technology are vast, promising to revolutionize not only high-performance computing and artificial intelligence but also the realm of automotive chips and beyond.
In a world where technology is perpetually evolving, the advent of SOT-MRAM stands as a testament to human ingenuity and the relentless pursuit of innovation. With its blend of speed, efficiency, and versatility, this groundbreaking memory technology may very well shape the future landscape of computing.
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